Micron 宣布下一代 G11 内存芯片采用超过 400 层堆叠,数据容量较 G9 翻倍。该芯片传输速度提升达 1.5 倍,每个比特能耗降低超 25%。G11 预计于 2027 年下半年开始量产。
Micron’s next memory chip generation, G11, will fit roughly twice as much data on the same patch of silicon as today’s G9, the main route to bigger SSDs, which AI data centers now buy in huge amounts.
G9 stacks its storage cells 276 floors high. Micron skipped the G10 name and reworked its next chip for AI, calling it G11: it stacks over 400 floors and packs each cell tighter, so the same size chip holds about twice the data, moves it up to 1.5x faster and uses over 25% less energy to move each bit.
Volume production starts in the second half of 2027, so drives using G11 arrive later, and Micron hasn’t said how much cheaper each gigabyte will get, since taller stacks and a second bonded wafer also add cost.
来源:Rohan Paul · x.com